title: GaN HEMT on Si for high power applications
This paper appears in:
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Date of Conference: 28-30 Sept. 2011
Author(s): Chang, E.Y.
Nat. Chiao Tung Univ., Hsinchu, Taiwan
Page(s): A2
Product Type: Conference Publications...